Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs-Reference-Cited by-同舟云学术

Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and comparison with BJTs

Published:2015-08 Issue:9-10 Volume:55 Page:1708-1713
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Chen Cheng,Labrousse Denis,Lefebvre Stéphane,Petit Mickael,Buttay Cyril,Morel Hervé

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Switching and conducting performance of SiC-JFET and ESBT against MOSFET and IGBT;Knop,2008

2. High-temperature and high-frequency performance evaluation of 4H–SiC unipolar power devices;Chinthavali,2005

3. Experimental analysis of electro-thermal instability in SiC Power MOSFETs;Riccio;Microelectron. Reliab.,2013

4. Transient robustness testing of silicon carbide (SiC) power MOSFETs;Fayyaz,2013

5. Robustness of 1.2kV SiC MOSFET devices;Othman;Microelectron. Reliab.,2013

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