A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism-Reference-Cited by-同舟云学术

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism

Published:2024-08-23 Issue: Volume:360 Page:67-74
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Terracciano Vincenzo¹,Borghese Alessandro¹,Boccarossa Marco¹,d'Alessandro Vincenzo¹,Irace Andrea¹^ORCID

Affiliation:

1. University Federico II

Abstract

In this paper, a simple compact model for the static behavior of SiC MPS diodes is developed in the form of a SPICE-compatible subcircuit. The model is suited to describe the undesired snapback mechanism likely to occur in unoptimized high-voltage MPS structures with narrow width of the PiN portion and/or very thick drift layer; in particular, the model accounts for the snapback mechanism both as the cell extension varies and as individual portions of Schottky and PiN vary. Sentaurus TCAD simulations of a 10-kV MPS diode are used as a reference for the calibration of the model parameters and accuracy verification.

Publisher

Trans Tech Publications, Ltd.

Link

https://www.scientific.net/SSP.360.67.pdf

Reference13 articles.

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