Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability-Reference-Cited by-同舟云学术

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Dynamic Analytical Switching Loss Model of SiC MOSFET Considering Threshold Voltage Instability

Published:2024-11 Issue:11 Volume:39 Page:14630-14642
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Cai Yumeng¹^ORCID,Sun Peng¹^ORCID,Zhang Yuankui¹,Chen Cong¹,Zhao Zhibin¹^ORCID,Li Xuebao¹^ORCID,Qi Lei¹^ORCID,Chen Zhong²^ORCID,Nee Hans-Peter³^ORCID

Affiliation:

1. School of Electrical and Electronic Engineering, North China Electric Power University, Beijing, China

2. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR, USA

3. KTH Royal Institute of Technology, Stockholm, Sweden

Funder

National Science Fund of China for Distinguished Young Scholars

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/63/10679334/10540237.pdf?arnumber=10540237

Reference32 articles.

1. Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge

2. A 50-kW Air-Cooled SiC Inverter With 3-D Printing Enabled Power Module Packaging Structure and Genetic Algorithm Optimized Heatsinks

3. Modeling of Wide Bandgap Power Semiconductor Devices—Part I

4. Modeling of Wide-Bandgap Power Semiconductor Devices—Part II

5. An Improved Compact Model for a Silicon-Carbide MOSFET and Its Application to Accurate Circuit Simulation

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