Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET-Reference-Cited by-同舟云学术

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Breakthrough Short Circuit Robustness Demonstrated in Vertical GaN Fin JFET

Published:2021 Issue: Volume: Page:1-1
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Zhang Ruizhe,Liu Jingcun,Li Qiang,Pidaparthi Subhash,Edwards Andrew,Drowley Cliff,Zhang Yuhao

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/4359240/09664352.pdf?arnumber=9664352

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of Dynamic R_ON, Coss Loss, and Short-Circuit Ruggedness of 650V and 1200V Industrial Vertical GaN JFETs;2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2024-06-02

2. Study of drain-induced channel effects in vertical GaN junction field-effect transistors;Semiconductor Science and Technology;2024-05-23

3. Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs;Applied Physics Express;2024-02-01

4. Dynamic R _ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

5. High-breakdown-voltage GaN-based vertical FinFET design;Journal of Power Electronics;2023-12-21

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