Author:
Ishida Takashi,Ushijima Takashi,Nakabayashi Shosuke,Kato Kozo,Koyama Takayuki,Nagasato Yoshitaka,Ohara Junji,Hoshi Shinichi,Nagaya Masatake,Hara Kazukuni,Kanemura Takashi,Taki Masato,Yui Toshiki,Hara Keisuke,Kawaguchi Daisuke,Kuno Koji,Osajima Tetsuya,Kojima Jun,Uesugi Tsutomu,Tanaka Atsushi,Sasaoka Chiaki,Onda Shoichi,Suda Jun
Abstract
Abstract
To address the issue of the high cost of GaN substrates, a recycling process for GaN substrates using a laser slicing technique was investigated. The channel properties of lateral MOSFETs and the reverse characteristics of vertical PN diodes, which represent the main components of vertical power devices, exhibited no degradation either before and after laser slicing or due to the overall GaN substrate recycling process. This result indicates that the proposed recycling process is an effective method for reducing the cost of GaN substrates and has the potential to encourage the popularization of GaN vertical power devices.