Cu Clip-Bonding Method With Optimized Source Inductance for Current Balancing in Multichip SiC MOSFET Power Module
Author:
Affiliation:
1. State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, China
Funder
National Key Research and Development Program of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9743201/09674776.pdf?arnumber=9674776
Reference34 articles.
1. Direct Integration of Optimized Phase-Change Heat Spreaders Into SiC Power Module for Thermal Performance Improvements Under High Heat Flux
2. The Study on Thermal Coupling Effect for SiC Power Module Design Guidelines
3. Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode
4. Layout-Dominated Dynamic Current Imbalance in Multichip Power Module: Mechanism Modeling and Comparative Evaluation
5. Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation
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