A Multiloop Layout SiC Power Module for Power Loop Inductance Reduction with Reverse Current Coupling
Author:
Affiliation:
1. Xidian University,Guangzhou Institute of Technology,Guangzhou,China,510555
2. Xidian University,School of Microelectronics,Xi’an,China,710071
Funder
Natural Science Foundation of Shaanxi Province
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10567049/10567050/10567225.pdf?arnumber=10567225
Reference15 articles.
1. High performance SiC MOSFET module for industrial applications
2. Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated
3. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV
4. Design of a Compact, Low Inductance 1200 V, 6.5 mΩ SiC Half-Bridge Power Module with Flexible PCB Gate Loop Connection
5. A Novel 3D Driver Integrated Silicon Carbide Half-bridge Power Module with Low Stray Inductance
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