Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode-Reference-Cited by-同舟云学术

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Comparison Study of Surge Current Capability of Body Diode of SiC MOSFET and SiC Schottky Diode

Published:2018-09 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Jiang Xi,Zhai Dongyuan,Chen Jianjun,Yuan Fanxing,Li Zongjian,He Zhizhi,Shen Z. John,Wang Jun

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8537478/8557346/08558388.pdf?arnumber=8558388

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation on Degradation of 1200-V Planar and Trench SiC MOSFET Under Surge Current Stress of Body Diode;IEEE Transactions on Electron Devices;2024-01

2. Failure Behavior and Mechanism of p-GaN Gate AlGaN/GaN HEMTs in the Third Quadrant Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2024

3. Achieving high-quality silver sintered joint for highly-reliable schottky barrier diodes via pressureless method;Frontiers in Materials;2023-11-06

4. Novel Layout Design of 4H-SiC Merged PiN Schottky Diodes Leading to Improved Surge Robustness;Chinese Physics B;2022-12-21

5. Review—Gate Oxide Thin Films Based on Silicon Carbide;ECS Journal of Solid State Science and Technology;2022-08-01

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