Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallization
Author:
Affiliation:
1. Imec,Leuven,Belgium
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9881276/9881277/09881310.pdf?arnumber=9881310
Reference7 articles.
1. CuAl2 thin films as a low-resistivity interconnect material for advanced semiconductor devices
2. NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node
3. Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer
4. Thickness scaling of NiAl thin films for alternative interconnect metallization
5. Phase equilibria and structural investigations in the Ni-poor part of the system Al–Ge–Ni
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