NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node-Reference-Cited by-同舟云学术

NiAl as a potential material for liner- and barrier-free interconnect in ultrasmall technology node

Published:2018-10-29 Issue:18 Volume:113 Page:183503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Linghan¹,Ando Daisuke¹,Sutou Yuji¹^ORCID,Gall Daniel²^ORCID,Koike Junichi¹^ORCID

Affiliation:

1. Department of Materials Science, Tohoku University, Sendai 980-8579, Japan

2. Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5049620

Reference29 articles.

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2. K. Motoyama , O. Van Der Straten , J. Maniscalco , H. Huang , Y. B. Kim , J. K. Choi , J. H. Lee , C.K. Hu , P. McLaughlin , T. Standaert , R. Quon , and G. Bonilla , in IEEE International Interconnect Technology Conference ( IEEE, 2018), pp. 40–42.

3. Ultrathin Diffusion Barriers/Liners for Gigascale Copper Metallization

4. Reactively sputtered TiN as a diffusion barrier between Cu and Si

5. Comparative study of tantalum and tantalum nitrides (Ta2N and TaN) as a diffusion barrier for Cu metallization

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