Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer-Reference-Cited by-同舟云学术

Realization of high quality epitaxial current- perpendicular-to-plane giant magnetoresistive pseudo spin-valves on Si(001) wafer using NiAl buffer layer

Published:2016-05-01 Issue:5 Volume:4 Page:056104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Mater.

Author:

Chen Jiamin¹²,Liu J.¹,Sakuraba Y.¹,Sukegawa H.¹,Li S.¹,Hono K.¹²^ORCID

Affiliation:

1. Research Center for Magnetic and Spintronics Materials, National Institute for Materials Science, 1-2-1, Sengen, Tsukuba 305-0047, Japan

2. Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-2-1, Sengen, Tsukuba 305-0047, Japan

Funder

ImPACT Program of Council for Science, Technology and Innovation, Japan

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Reference25 articles.

1. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

2. Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

3. The emergence of spin electronics in data storage

4. Theory of the perpendicular magnetoresistance in magnetic multilayers

5. CPP magnetoresistance of magnetic multilayers: A critical review

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Epitaxial growth of magnetron sputtered NiAl on Ge mediated by native GeOx;Journal of Physics D: Applied Physics;2024-01-08

2. Heusler alloys: Past, properties, new alloys, and prospects;Progress in Materials Science;2023-02

3. Improved resistivity of NiAl thin films at low temperature for advanced interconnect metallization;2022 IEEE International Interconnect Technology Conference (IITC);2022-06-27

4. Epitaxial all-bcc-Co50Fe50/Cu/Co50Fe50 current-in-plane giant magnetoresistive spin-valves on Si(0 0 1) substrate;Journal of Magnetism and Magnetic Materials;2022-06

5. Fully epitaxial giant magnetoresistive devices with half-metallic Heusler alloy fabricated on poly-crystalline electrode using three-dimensional integration technology;Acta Materialia;2020-11