The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs-Reference-Cited by-同舟云学术

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The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs

Published:2006-10 Issue:10 Volume:27 Page:799-801
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

You H.-C.,Kuo P.-Y.,Ko F.-H.,Chao T.-S.,Lei T.-F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/35977/01704904.pdf?arnumber=1704904

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