Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer-Reference-Cited by-同舟云学术

Low temperature below 200 °C solution processed tunable flash memory device without tunneling and blocking layer

Published:2019-05-13 Issue:1 Volume:10 Page:
ISSN:2041-1723
Container-title:Nature Communications
language:en
Short-container-title:Nat Commun

Author:

Mondal Sandip,Venkataraman V.

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy,General Biochemistry, Genetics and Molecular Biology,General Chemistry

Link

http://www.nature.com/articles/s41467-019-10142-y.pdf

Reference46 articles.

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3. Hu, S. M. Evidence of hole injection and trapping in silicon nitride films prepared by reactive sputtering. Appl. Phys. Lett. 10, 97 (1967).

4. Bass, R. S., Jr., Bhattacharyya, A. & Grise, G. D. Non-volatile memory cell having Si rich silicon nitride charge trapping layer. United States Patent [19] 14 (1989).

5. Park, Y. et al. Highly manufacturable 32 Gb multi-Level NAND flash memory with 0.0098 μm2 cell size using TANOS(Si-Oxide-Al2O3—TaN) cell technology. Tech. Dig. 2, 5–8 (2006).

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