Remarkable charge-trapping performance based in Zr 0.5 Hf 0.5 O 2 with nanocrystal Ba 0.6 Sr 0.4 TiO 3 blocking layer for nonvolatile memory device-Reference-Cited by-同舟云学术

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Remarkable charge-trapping performance based in Zr 0.5 Hf 0.5 O 2 with nanocrystal Ba 0.6 Sr 0.4 TiO 3 blocking layer for nonvolatile memory device

Published:2016-10 Issue:42 Volume:380 Page:3509-3513
ISSN:0375-9601
Container-title:Physics Letters A
language:en
Short-container-title:Physics Letters A

Author:

Yan X.B.,Jia X.L.,Yang T.,Zhao J.H.,Li Y.C.,Zhou Z.Y.,Zhang Y.Y.

Funder

National Natural Science Foundation of China

Natural Science Foundation of Hebei Province

Science Research Program of University in Hebei Province

Youth Project of University in Hebei Province

Hebei University

Publisher

Elsevier BV

Subject

General Physics and Astronomy

Reference21 articles.

1. Concept of a Molecular Charge Storage Dielectric Layer for Organic Thin-Film Memory Transistors

2. Influence of Al2O3 crystallization on band offsets at interfaces with Si and TiNx

3. Overview of candidate device technologies for storage-class memory

4. The Impact of Deep Ni Salicidation and$hboxNH_3$Plasma Treatment on Nano-SOI FinFETs

5. Design and Fabrication of Ta$_{2}$O $_{5}$ Stacks for Discrete Multibit Memory Application

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1. Large memory window with low operating voltages using Hf 1.5 Gd 2 O 6 charge trapping layer and thin MoS 2 channel;Electronics Letters;2021-10-27

2. Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application;Science China Materials;2020-07-31

3. Enhanced memory characteristics of charge trapping memory by employing graphene oxide quantum dots;Applied Physics Letters;2020-03-09

4. A Gd-doped HfO2 single film for a charge trapping memory device with a large memory window under a low voltage;RSC Advances;2020

5. Dielectric Losses in Nanosized Ferroelectric and Diamond-Like Films on SHF;Materials Science Forum;2019-09

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