A DC to 110 GHz Plasma Switch
Author:
Affiliation:
1. Purdue University,ARES Lab,USA
2. University of Alberta,M2M Lab,Canada
Funder
Office of Naval Research
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9865233/9865240/09865315.pdf?arnumber=9865315
Reference14 articles.
1. Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process
2. A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch
3. A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS
4. One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique
5. An Ultra-Broadband Contact-Capacitive RF MEMS Switch for 15-110GHZ Applications
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1. Design and Optimization of a High-Power Solid-State Plasma RF Switch;IEEE Transactions on Microwave Theory and Techniques;2024-01
2. Design and Characterization of W-Band Silicon Micromachined High-Power and High-Speed Photoconductive Evanescent-Mode Waveguide Single and Double Throw Switches;IEEE Transactions on Microwave Theory and Techniques;2024-01
3. A Reconfigurable Reflective/Absorptive SPDT Plasma Switch;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
4. Broadband THz Switching with Extremely Low Insertion Loss and Superior Isolation;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11
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