A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch-Reference-Cited by-同舟云学术

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A New Wideband, Low Insertion Loss, High Linearity SiGe RF Switch

Published:2020-10 Issue:10 Volume:30 Page:985-988
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Cheon Clifford D.^ORCID,Cho Moon-Kyu^ORCID,Rao Sunil G.^ORCID,Cardoso Adilson S.^ORCID,Connor Jeffrey D.^ORCID,Cressler John D.^ORCID

Funder

Georgia Tech Research Institute

Georgia Electronic Design Center (GEDC) at Georgia Tech

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9215052/09194281.pdf?arnumber=9194281

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A broadband low‐loss SPDT RF switch using a new off‐chip compensation technology;International Journal of Circuit Theory and Applications;2024-01-25

2. Emerging memory electronics for non-volatile radiofrequency switching technologies;Nature Reviews Electrical Engineering;2024-01-11

3. Compact Multipole GaN-on-Si SPDT Switch Using Inductive Parasitic Effects of Hybrid HEMT Devices;IEEE Transactions on Microwave Theory and Techniques;2023-11

4. A Compact DC-110GHz SPST Switch in 22nm FDSOI CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-10

5. SPST and SPDT 60 GHz Travelling-Wave Switches in 22 nm FD-SOI;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

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