Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process-Reference-Cited by-同舟云学术

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Wideband SPDT and SP4T RF Switches using Phase-Change Material in a SiGe BiCMOS Process

Published:2021-06-07 Issue: Volume: Page:
ISSN:
Container-title:2021 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

Amin Farooq,Beglin Thomas,Edwards Nicholas,El-Hinnawy Nabil,Slovin Greg,Howard David,Nichols Doyle,Young Robert M.

Funder

DARPA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9574790/9574791/09574962.pdf?arnumber=9574962

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Tale of Two Phases: An Overview of Phase-Change Material RF Switch Technology: Sub-20-fs R_ON*C_OFF RF Switch Technology for the Mm-Wave and 5G/6G Revolutions;IEEE Microwave Magazine;2024-08

2. Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications;Nature Electronics;2024-07-01

3. A Novel Wideband RF Turbo Switch Using Phase-Change-Material in a SiGe BiCMOS Process;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

4. Optimized PCM Switches and Capacitors: Basic Building Blocks for RF and Microwave Subsystems;IEEE Microwave Magazine;2024-02

5. Design and Fabrication of Non-Volatile Direct Heating RF High-Speed Switch Matrix Based on GeTe Phase Change Material;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

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