Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications-Reference-Cited by-同舟云学术

Memristive circuits based on multilayer hexagonal boron nitride for millimetre-wave radiofrequency applications

Published:2024-07-01 Issue:7 Volume:7 Page:557-566
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Pazos Sebastian^ORCID,Shen Yaqing,Zhang Haoran^ORCID,Verdú Jordi^ORCID,Fontana Andrés^ORCID,Zheng Wenwen,Yuan Yue^ORCID,Alharbi Osamah,Ping Yue,Guerrero Eloi^ORCID,Acosta Lluís^ORCID,de Paco Pedro^ORCID,Psychogiou Dimitra,Shamim Atif^ORCID,Akinwande Deji^ORCID,Lanza Mario^ORCID

Funder

King Abdullah University of Science and Technology

Science Foundation Ireland

The Cockrell Foundation

Publisher

Springer Science and Business Media LLC

Link

https://www.nature.com/articles/s41928-024-01192-2.pdf

Reference49 articles.

1. Ielmini, D. & Waser, R. (eds) Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications (Wiley-VCH, 2016).

2. Pearson, A. D., Northover, W., Dewald, J. F. & Peck, W. Jr Chemical, physical, and electrical properties of some unusual inorganic glasses. Adv. Glass Technol. 2, 357–365 (1962).

3. Lanza, M. et al. Memristive technologies for data storage, computation, encryption, and radio-frequency communication. Science 376, eabj9979 (2022).

4. Pazos, S. et al. Hardware implementation of a true random number generator integrating a hexagonal boron nitride memristor with a commercial microcontroller. Nanoscale 15, 2171–2180 (2023).

5. Zhu, K. et al. Inkjet-printed h-BN memristors for hardware security. Nanoscale 15, 9985–9992 (2023).

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