Broadband THz Switching with Extremely Low Insertion Loss and Superior Isolation
Author:
Affiliation:
1. University of Notre Dame,Department of Electrical Engineering,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10187888/10187785/10187994.pdf?arnumber=10187994
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1. High-Performance WR-4.3 Optically Controlled Variable Attenuator With 60-dB Range
2. D–Band RF–MEMS SPDT Switch in a $0.13~\mu$ m SiGe BiCMOS Technology
3. A Cost-Effective Approach for Achieving Subwavelength THz Imaging Using Photoinduced Coded-Apertures on Mesa-Array Structures
4. Design an measurement of a waveguide probe based WR3.4 optically controlled modulator;connors;28th Int Symposium on Space Terahertz Technology,2017
5. A G-band SPST switch with 2.4-dB insertion loss and minimum 28.5-dB isolation using grounded co-planar waveguide folded coupled line topology in 65-nm CMOS technology
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