A G-band SPST switch with 2.4-dB insertion loss and minimum 28.5-dB isolation using grounded co-planar waveguide folded coupled line topology in 65-nm CMOS technology

Author:

Wang Yunshan,Chen Chun-Nien,Ye Yu,Chen Yen-Chih,Yu Bo,Gu Qun Jane,Wang Huei

Publisher

IEEE

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Broadband THz Switching with Extremely Low Insertion Loss and Superior Isolation;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

2. A D-Band Joint Radar-Communication CMOS Transceiver;IEEE Journal of Solid-State Circuits;2023-02

3. A G-Band on-off-Keying Low-Power Transmitter and Receiver for Interconnect Systems in 65-nm CMOS;IEEE Transactions on Terahertz Science and Technology;2020-03

4. A G-Band Wideband Bidirectional Transceiver Front-End in 40-nm CMOS;IEEE Transactions on Circuits and Systems II: Express Briefs;2019-05

5. A 300-GHz SPST Switch With a New Coupled-Line Topology in 65-nm CMOS Technology;IEEE Transactions on Terahertz Science and Technology;2019-03

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