A New Simple and Low Cost Short Circuit Protection Method for p-GaN HEMT
Author:
Affiliation:
1. Chongqing University,State Key Laboratory of Power Transmission Equipment and System Security and New Technology, School of Electrical Engineering,Chongqing,China,400044
Funder
Research and Development
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9676696/9676713/09676798.pdf?arnumber=9676798
Reference15 articles.
1. A Short-Circuit Protection Circuit With Strong Noise Immunity for GaN HEMTs
2. Switching Transient Analysis for Normally-off GaN Transistor With p-GaN Gate in a Phase-Leg Circuit
3. P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit
4. Robustness of 650-V Enhancement-Mode GaN HEMTs Under Various Short-Circuit Conditions
5. Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current;Microelectronics Journal;2024-03
2. p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
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