P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit-Reference-Cited by-同舟云学术

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P-GaN HEMTs Drain and Gate Current Analysis Under Short-Circuit

Published:2017-04 Issue:4 Volume:38 Page:505-508
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Fernandez M.,Perpina X.^ORCID,Roig J.,Vellvehi M.,Bauwens F.,Jorda X.,Tack M.

Funder

Spanish MINECO

AGAUR Funds

BSH Fair Cooking Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/7885134/07845577.pdf?arnumber=7845577

Cited by 43 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the forward gate leakage current in pGaN/AlGaN/GaN HEMTs through TCAD simulations;Semiconductor Science and Technology;2024-06-18

2. A Simple Thermal Model for Junction and Hot Spot Temperature Estimation of 650 V GaN HEMT during Short Circuit;Electronics;2024-06-04

3. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04

4. Highly Reliable Short-Circuit Protection Circuits for Gallium Nitride High-Electron-Mobility Transistors;Electronics;2024-03-25

5. Real-time channel temperature monitoring of p-GaN HEMTs based on gate leakage current;Microelectronics Journal;2024-03

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