A Short-Circuit Protection Circuit With Strong Noise Immunity for GaN HEMTs-Reference-Cited by-同舟云学术

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A Short-Circuit Protection Circuit With Strong Noise Immunity for GaN HEMTs

Published:2021-02 Issue:2 Volume:36 Page:2432-2442
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Wu Jianping^ORCID,Meng Wuji^ORCID,Zhang Fanghua,Dong Guangdong^ORCID,Shu Jianjun

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9207773/09157972.pdf?arnumber=9157972

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Evaluation of High-Speed Overcurrent and Short-Circuit Detection Circuits With High Noise Margin for WBG Power Semiconductor Devices;IEEE Access;2024

2. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

3. Overview of GaN HEMT technology for high frequency applications;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

4. An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT;IEEE Transactions on Power Electronics;2022-08

5. Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices;IEEE Transactions on Industrial Electronics;2022-05

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