Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation-Reference-Cited by-同舟云学术

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Ultralow-resistivity CMOS contact scheme with pre-contact amorphization plus Ti (germano-)silicidation

Published:2016-06 Issue: Volume: Page:
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Container-title:2016 IEEE Symposium on VLSI Technology
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Author:

Yu H.,Schaekers M.,Hikavyy A.,Rosseel E.,Peter A.,Hollar K.,Khaja F. A.,Aderhold W.,Date L.,Mayur A. J.,Lee J.-G.,Shin K. M.,Douhard B.,Chew S. A.,Demuynck S.,Kubicek S.,Kim D.,Mocuta A.,Barla K.,Horiguchi N.,Collaert N.,Thean A.V.-Y.,De Meyer K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7569798/7573353/07573381.pdf?arnumber=7573381

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