Author:
Chidambaram P.R.,Smith B.A.,Hall L.H.,Bu H.,Chakravarthi S.,Kim Y.,Samoilov A.V.,Kim A.T.,Jones P.J.,Irwin R.B.,Kim M.J.,Rotondaro A.L.P.,Machala C.F.,Grider D.T.
Cited by
26 articles.
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2. Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS);Journal of Materials Science: Materials in Electronics;2019-01-17
3. Strained Silicon Technology;Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS Technology Node and Beyond;2019
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5. Ge Condensation and Its Device Application;Photonics and Electronics with Germanium;2015-05-08