Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si<sub>0.5</sub>Ge<sub>0.5</sub>(001)-2 × 1 Surfaces-Reference-Cited by-同舟云学术

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Effects of Strain on Diborane Dissociative Adsorption and Boron Incorporation on Si_0.5Ge_0.5(001)-2 × 1 Surfaces

Published:2024-07-17 Issue:30 Volume:128 Page:12437-12449
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Rengo Gianluca¹²³^ORCID,Pourtois Geoffrey²⁴^ORCID,Porret Clement²,Loo Roger²⁵,Vantomme André¹^ORCID

Affiliation:

1. Quantum Solid State Physics, KU Leuven, Celestijnenlaan 200, 3001 Leuven, Belgium

2. Imec, Kapeldreef 75, 3001 Leuven, Belgium

3. FWO─Vlaanderen, Egmontstraat 5, 1000 Brussel, Belgium

4. Department of Chemistry, University of Antwerp, Universiteitsplein 1, 2610 Wilrijk, Antwerpen, Belgium

5. Ghent University, DiSC, Krijgslaan 281/S1, 9000 Ghent, Belgium

Funder

Fonds Wetenschappelijk Onderzoek

Electronic Components and Systems for European Leadership

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.4c03110

Reference50 articles.

1. Ghani, T.; Armstrong, M.; Auth, C.; Bost, M.; Charvat, P.; Glass, G.; Hoffmann, T.; Johnson, K.; Kenyon, C.; Klaus, J.; McIntyre, B.; Mistry, K.; Murthy, A.; Sandford, J.; Silberstein, M.; Sivakumar, S.; Smith, P.; Zawadzki, K.; Thompson, S.; Bohr, M. A 90nm High Vol. Manufacturing Logic Technology Featuring Novel 45nm Gate Length Strained Silicon CMOS Transistors. In IEEE International Electron Devices Meeting 2003; IEEE, 2003, pp 11.6.1–11.6.3.10.1109/IEDM.2003.126944.

2. Chidambaram, P. R.; Smith, B. A.; Hall, L. H.; Bu, H.; Chakravarthi, S.; Kim, Y.; Samoilov, A. V.; Kim, A. T.; Jones, P. J.; Irwin, R. B.; Kim, M. J.; Rotondaro, A. L. P.; Machala, C. F.; Grider, D. T. 35% Drive Current Improvement from Recessed-SiGe Drain Extensions on 37 Nm Gate Length PMOS. In Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004; IEEE, 2004, pp 48–4910.1109/VLSIT.2004.1345386.

3. Growth of epitaxial germanium-silicon heterostructures by chemical vapour deposition

4. Strain compensation in Si1−xGex by heavy boron doping

5. First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities

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