Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond-Reference-Cited by-同舟云学术

Low leakage and low variability Ultra-Thin Body and Buried Oxide (UT2B) SOI technology for 20nm low power CMOS and beyond

Published:2010-06 Issue: Volume: Page:
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Container-title:2010 Symposium on VLSI Technology
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Author:

Andrieu F.,Weber O.,Mazurier J.,Thomas O.,Noel J-P.,Fenouillet-Beranger C.,Mazellier J-P.,Perreau P.,Poiroux T.,Morand Y.,Morel T.,Allegret S.,Loup V.,Barnola S.,Martin F.,Damlencourt J-F.,Servin I.,Casse M.,Garros X.,Rozeau O.,Jaud M-A.,Cibrario G.,Cluzel J.,Toffoli A.,Allain F.,Kies R.,Lafond D.,Delaye V.,Tabone C.,Tosti L.,Brevard L.,Gaud P.,Paruchur V.,Bourdelle K.K.,Schwarzenbach W.,Bonnin O.,Nguyen B-Y.,Doris B.,Boeuf F.,Skotnicki T.,Faynot O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5548927/5556114/05556122.pdf?arnumber=5556122

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