Thermal Evaluation of 28-nm p-type FD-SOI MOSFETs-Reference-Cited by-同舟云学术

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Thermal Evaluation of 28-nm p-type FD-SOI MOSFETs

Published:2023-07-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Latin American Electron Devices Conference (LAEDC)
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Author:

Rossetto Alan¹,Soares Caroline²,Wirth Gilson²,Pavanello Marcelo³,Wang Ziyi⁴,Vasileska Dragica⁴

Affiliation:

1. Universidade Federal de Pelotas,Centro de Desenvolvimento Tecnológico,Pelotas,Brazil

2. Universidade Federal do Rio Grande do Sul,Programa de Pós-graduação em Microeletrônica,Porto Alegre,Brazil

3. Centro Universitário FEI,Departamento de Engenharia Elétrica,São Bernardo do Campo,Brazil

4. Arizona State University,School of Electrical, Computer and Energy Engineering,Tempe,USA

Funder

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10209097/10208282/10209116.pdf?arnumber=10209116

Reference15 articles.

1. Concurrent thermal and electrical modeling of sub‐micrometer silicon devices

2. Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator

3. Modeling self-heating effects in 28 nm technology node fully-depleted SOI devices;wang;2023 22nd International Workshop on Computational Electronics (IWCN),2023

4. FDSOI for cryoCMOS electronics: device characterization towards compact model

5. Modeling Quantum Confinement in Multi-Gate Transistors with Effective Potential

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