Advanced Technologies for Future Materials and Devices

Author:

Balestra Francis

Publisher

Springer International Publishing

Reference67 articles.

1. D. Kahng M.M.: Atalla Silicon–Silicon Dioxide Field Induced Surface Devices, IRE Solid-State Device Res. Conf., Carnegie Institute of Technology, Pittsburgh, PA, 1960. D. Kahng, A historical perspective on the development of MOS transistors and related devices, IEEE Trans. Electron Devices, ED-23, 655 (1976)

2. Balestra, F.: In: Balestra, F. (ed.) Nanoscale CMOS: Innovative Materials, Modeling and Characterization. ISTE-Wiley (2010)

3. Balestra, F.: In: Balestra, F. (ed.) Beyond CMOS Nanodevices (tomes 1 et 2). ISTE-Wiley (2014)

4. Cristoloveanu, S., F.: Balestra Introduction to SOI technology and transistors, Chapter. In: Physics and operation of Silicon devices and Integrated circuits. ISTE-Wiley (2009)

5. Balestra, F.: Silicon-based devices and materials for nanoscale CMOS and beyond-CMOS, Chapter. In: Luryi, S., et al. (eds.) Future Trends in Microelectronics, from Nanophotonics to Sensors and Energy. Wiley (2010)

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