Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation-Reference-Cited by-同舟云学术

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Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

Published:2018-06 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Symposium on VLSI Technology
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Author:

Togo M.,Asra R.,Balasubramaniam P.,Zhang X.,Yu H.,Yamaguchi S.,Geiss E.,Yang H. S.,Cohen B.,Lo H-C.,Hu O.,Lazar H.,Kwon O.,Burnett D.,Versaggi J.,Banghart E.,Hassan M. K.,Bazizi E.,Pantisano L.,Lee J. G.,Samavedam S. B.,Sohn D. K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8481640/8510617/08510641.pdf?arnumber=8510641

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of dual work function metal (DWFM) gate stacks with ALD TaAlN and TaAlC for multi threshold voltages (VTHs) engineering in MOS device integration;Materials Science in Semiconductor Processing;2024-06

2. A 12nm CMOS Technology on High Performance Multi-Workfunction Transistors;2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA);2022-04-18

3. Novel Band-Edge Work Function Performance Modulation via NPT with PMOS1st/NMOS1st Laminated Stack for PMOS Low Power Target;ECS Journal of Solid State Science and Technology;2020-11-02

4. Electrical Characteristics of LDD and LDD-Free FinFET Devices of Dimension Compatible With 14 nm Technology Node;IEEE Journal of the Electron Devices Society;2020

5. Performance boost using spacer-confined cavity for advanced FinFET technology;Semiconductor Science and Technology;2018-12-06

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