A 12nm CMOS Technology on High Performance Multi-Workfunction Transistors-Reference-Cited by-同舟云学术

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A 12nm CMOS Technology on High Performance Multi-Workfunction Transistors

Published:2022-04-18 Issue: Volume: Page:
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Container-title:2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)
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Author:

Du Yuchen¹,Yin Jianhua¹,He Xiaoli¹,Zhan Hui¹,Yu Hong¹,Zhi Gao Wen¹,Gon Lee Jae¹

Affiliation:

1. GlobalFoundries,Malta,NY,USA,12020

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9770952/9770961/09771014.pdf?arnumber=9771014

Reference3 articles.

1. Multiple Workfunction High Performance FinFETs for Ultra-low Voltage Operation

2. A 7nm CMOS platform technology featuring 4th generation FinFET transistors with a 0.027um2 high density 6-T SRAM cell for mobile SoC applications

3. A 12nm FinFET Technology Featuring 2nd Generation FinFET for Low Power and High Performance Applications

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 12LP FinFET CMOS Ultra-Low Leakage SRAM Devices with 0.54pA/cell Istby;2024 35th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC);2024-05-13

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