Sub $1\ \mu \mathrm{m}$ Pitch Achievement for Cu/SiO<sub>2</sub> Hybrid Bonding-Reference-Cited by-同舟云学术

Sub $1\ \mu \mathrm{m}$ Pitch Achievement for Cu/SiO₂ Hybrid Bonding

Published:2022-12-07 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 24th Electronics Packaging Technology Conference (EPTC)
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Author:

Ayoub Bassel¹,Lhostis Sandrine¹,Moreau Stephane²,Souchier Emeline¹,Deloffre Emilie¹,Mermoz Sebastien¹,Cacho Maria Gabriela Gusmao¹,Szekely Norah¹,Rey Christelle¹,Aybeke Ece¹,Gredy Victor¹,Lamontagne Patrick¹,Thomas Olivier³,Fremont Helene⁴

Affiliation:

1. STMicroelectronics,Crolles Cedex,France,F-38926

2. CEA-Leti, Univ. Grenoble Alpes,Grenoble,France,F-38000

3. Aix-Marseille Université, Université de Toulon, CNRS, IM2NP,Marseille,France

4. University of Bordeaux, UMR 5218,IMS Laboratory,Talence,France,33405

Funder

ECSEL Joint Undertaking (JU)

French National Research Agency (ANR)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10012686/10013085/10013180.pdf?arnumber=10013180

Reference19 articles.

1. Impact of Process Variations on the Capacitance and Electrical Resistance down to $1.44\ \mu\mathrm{m}$ Hybrid Bonding Interconnects

2. In-situ characterization of thermomechanical behavior of copper nano-interconnect for 3D integration

3. Contact Resistance and Contact Resistivity

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4. Hybrid Bonding for Ultra-High-Density Interconnect;Journal of Electronic Packaging;2024-03-08

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