Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm-Reference-Cited by-同舟云学术

Contact Resistivity of Submicron Hybrid Bonding Pads Down to 400 nm

Published:2024-06-06 Issue:8 Volume:53 Page:4421-4431
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:J. Electron. Mater.

Author:

Lhostis S.^ORCID,Ayoub B.,Sart C.,Moreau S.,Souchier E.,Gusmao Cacho M. G.,Deloffre E.,Mermoz S.,Rey C.,Le Roux F.,Aybeke E.,Gallois-Garreignot S.,Frémont H.,Tournier A.

Funder

IRT NANO-ELEC

IPCEI

Publisher

Springer Science and Business Media LLC

Link

https://link.springer.com/content/pdf/10.1007/s11664-024-11138-1.pdf

Reference28 articles.

1. Y. Oike, Evolution of image sensor architectures with stacked device technologies. IEEE Trans. Electron Devices 69(6), 2757 (2022). https://doi.org/10.1109/TED.2021.3097983.

2. Y. Kagawa, H. Hashiguchi, T. Kamibayashi, M. Haneda, N. Fujii, S. Furuse, T. Hirano, and H. Iwamoto, Impacts of misalignment on 1µm pitch Cu–Cu hybrid bonding, in 2020 IEEE Intenational Interconnect Technology Conference (IITC), p. 148 (2020). https://doi.org/10.1109/IITC47697.2020.9515663

3. J. Jourdon, S. Lhostis, S. Moreau, J. Chossat, M. Arnoux, C. Sart, Y. Henrion, P. Lamontagne, L. Arnaud, and N. Bresson, Hybrid bonding for 3d stacked image sensors: impact of pitch shrinkage on interconnect robustness, in 2018 IEEE International Electron Devices Meeting (IEDM), p. 7 (2018).

4. S. Wang, X. Jiang, F. Bai, W. Xiao, X. Long, Q. Ren, and Y. Kang, A true process-heterogeneous stacked embedded DRAM structure based on wafer-level hybrid bonding. Electronics 12, 1077 (2023). https://doi.org/10.3390/electronics12051077.

5. Y. Ouyang, S. Yang, D. Yin, X. Huang, Z.Wang, S. Yang, K. Han, and Z. Xia, Excellent reliability of xtacking™ bonding interface, in 2021 IEEE International Reliability Physics Symposium (IRPS), p. 1 (2021).