A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding
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Published:2023-02-21
Issue:5
Volume:12
Page:1077
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ISSN:2079-9292
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Container-title:Electronics
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language:en
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Short-container-title:Electronics
Author:
Wang Song12ORCID, Jiang Xiping234, Bai Fujun25ORCID, Xiao Wenwu2, Long Xiaodong2, Ren Qiwei2, Kang Yi1
Affiliation:
1. School of Microelectronics, University of Science and Technology of China, Hefei 230026, China 2. Xi’an UniIC Semiconductors, Xi’an 710075, China 3. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China 4. School of Microelectronics, University of Chinese Academy of Sciences, Beijing 100029, China 5. Faculty of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049, China
Abstract
In response to the increasing manufacturing complexity/cost in maintaining DRAM advancements through traditional scaling, three-dimensional integrated circuits (3D ICs) and 2.5-dimensional ICs with Si interposers are known as promising candidates to overcome these challenges due to their advantages of low power, small form factor, high density, and high bandwidth. In this work, we present a true process-heterogeneous stacked embedded DRAM (SeDRAM) using hybrid bonding 3D integration process, achieving high bandwidth of 34 GBps/Gbit and high energy efficiency of 0.88 pJ/bit. Moreover, the critical factors of the SeDRAM design are presented (e.g., the low data movement energy, high-density physical interface, simplified protocol definition, process compatibility, density extensibility, and hybrid bonding connection fast test by DFT (design for test). Our results and design methodology have paved the way to realize applications of hybrid bonding to high bandwidth and energy efficiency DRAM. More importantly, the SeDRAM solution can also support the maximum storage density of 48 Gbit and the bandwidth capability of TBps. It can greatly alleviate the “memory wall” problem and thus improve its competitiveness in near-memory computing/computing-in-memory fields.
Funder
National Key R&D Program of China under grant
Subject
Electrical and Electronic Engineering,Computer Networks and Communications,Hardware and Architecture,Signal Processing,Control and Systems Engineering
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