High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology

Author:

Ali U.,Bober M.,Thiede A.,Awny A.,Fischer G.

Publisher

IEEE

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. A Low-Power 130-GHz Tuned Frequency Divider in 90-nm SiGe BiCMOS;IEEE Microwave and Wireless Technology Letters;2023-06

2. A Low Power 100 GHz Static CML Frequency Divider in 0.18 μm SiGe BiCMOS Technology;2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems;2023-01-22

3. A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology;2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2022-10-16

4. RF Performance Improvement of InP Frequency Divider by Using Enhanced f T -Doubler Technique;IEEE Microwave and Wireless Components Letters;2022-09

5. A broadband static frequency divider up to 62GHz in InP DHBT with capacitive degeneration;IEICE Electronics Express;2022-05-10

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