A Low Power 100 GHz Static CML Frequency Divider in 0.18 μm SiGe BiCMOS Technology-Reference-Cited by-同舟云学术

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A Low Power 100 GHz Static CML Frequency Divider in 0.18 μm SiGe BiCMOS Technology

Published:2023-01-22 Issue: Volume: Page:
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Container-title:2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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Author:

Chien Hao-Yu¹,Chen Christopher¹,Woo Jason¹,Pamarti Sudhakar¹,Yang Chih-Kong Ken¹,Chang Mau-Chung Frank¹

Affiliation:

1. University of California,Department of Electrical and Computer Engineering,Los Angeles,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10046197/10046144/10046259.pdf?arnumber=10046259

Reference9 articles.

1. Low-voltage flip-flop-based frequency divider up to 92-GHz in 130-nm SiGe BiCMOS technology

2. High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology

3. Distributed Modeling of Six-Port Transformer for Millimeter-Wave SiGe BiCMOS Circuits Design

4. A 70 GHz static dual-modulus frequency divider in SiGe BiCMOS technology

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1. Novel-View Acoustic Synthesis;2023 IEEE/CVF Conference on Computer Vision and Pattern Recognition (CVPR);2023-06

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