A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology-Reference-Cited by-同舟云学术

A Static Frequency Divider up to 163 GHz in SiGe-BiCMOS Technology

Published:2022-10-16 Issue: Volume: Page:
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Container-title:2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Vogelsang Florian¹,Bredendiek Christian²,Schöpfel Jan¹,Rücker Holger³,Pohl Nils¹

Affiliation:

1. Ruhr University,Institute of Integrated Systems,Bochum,Germany

2. Fraunhofer Institute for High Frequency Physics and Radar Techniques,Germany

3. IHP - Leibniz-Institut für Innovative Mikroelektronik,Germany,15236

Funder

Deutsche Forschungsgemeinschaft

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10051690/10051691/10051704.pdf?arnumber=10051704

Reference10 articles.

1. High speed static frequency divider design with 111.6 GHz self-oscillation frequency (SOF) in 0.13 µm SiGe BiCMOS technology

2. A tunable flipflop-based frequency divider up to 113 GHz and a fully differential 77GHz push-push VCO in SiGe BiCMOS technology

3. Low-Power, Low-Phase Noise SiGe HBT Static Frequency Divider Topologies up to 100 GHz

4. Device Architectures for High-speed SiGe HBTs;rücker;2019 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),2019

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2. Design and Phase Noise Measurements of an Ultrafast Dual-Modulus Prescaler in 130 nm SiGe:C BiCMOS;IEEE Transactions on Microwave Theory and Techniques;2024-01

3. A compact and fully integrated FMCW radar transceiver combined with a dielectric lens;International Journal of Microwave and Wireless Technologies;2023-12-06