RF Performance Improvement of InP Frequency Divider by Using Enhanced f T -Doubler Technique
Author:
Affiliation:
1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics
Link
http://xplorestaging.ieee.org/ielx7/7260/9874952/09766429.pdf?arnumber=9766429
Reference20 articles.
1. A 0.25 $\mu$m InP DHBT 200 GHz+ Static Frequency Divider
2. Frequency enhancement of a 40-nm CMOS static frequency divider by negative capacitance;issakov;Proc Eur Microw Integr Circuit Conf,2012
3. Layout and Interconnect Optimization for Low-Power and High-Sensitivity Operation of $E$ -Band SiGe HBT Frequency Dividers
4. Investigation of f T-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
5. Small-Signal Characterization of SiGe-HBT$f_T$-Doubler up to 120 GHz
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1. A broadband ECL static frequency divider in InP DHBT using differential <i>f<sub>t</sub></i>-doubler;IEICE Electronics Express;2024-01-25
2. A broadband ECL static frequency divider in InP DHBT using differential ft-doubler;IEICE ELECTRON EXPR;2023
3. Enhanced Darlington fT -doubler Structure in a 25 GS/s Track-and- Hold Amplifier for Bandwidth Improvement;IEICE ELECTRON EXPR;2023
4. Accurate Modeling Approach for InP f T-Doubler Based on Electromagnetic Simulation;IEEE Transactions on Electron Devices;2023-03
5. Enhanced Darlington <i>f<sub>T</sub></i>-doubler Structure in a 25 GS/s Track-and-Hold Amplifier for Bandwidth Improvement;IEICE Electronics Express;2023
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