Accurate Modeling Approach for InP <i>f</i> <sub>T</sub>-Doubler Based on Electromagnetic Simulation-Reference-Cited by-同舟云学术

Accurate Modeling Approach for InP f _T-Doubler Based on Electromagnetic Simulation

Published:2023-03 Issue:3 Volume:70 Page:941-946
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Yanzhe¹^ORCID,Ding Jianjun¹,Feng Ruize¹^ORCID,Cao Shurui¹^ORCID,Zhou Fugui¹,Ding Wuchang²,Su Yongbo²^ORCID,Jin Zhi²^ORCID

Affiliation:

1. School of Microelectronics, University of Chinese Academy of Sciences, Beijing, China

2. High-Frequency High-Voltage Device and Integrated Circuits Research and Development Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10025668.pdf?arnumber=10025668

Reference28 articles.

1. Enhancing the Speed of SiGe HBTs Using fT-Doubler Techniques

2. Scalable Small-Signal Modeling of RF CMOS FET Based on 3-D EM-Based Extraction of Parasitic Effects and Its Application to Millimeter-Wave Amplifier Design

3. Scalable small-signal modeling of RF CMOS FET based on 3-D EM-based extraction of parasitic effects

4. Investigation of HBT layout impact on fT-doubler performance for 90 nm SiGe HBTs;jain;Proc IEEE Bipolar/BiCMOS Circuits Technol Meeting (BCTM),2014

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1. Improving the RF Performance of InP DHBT Using f_T-Doubler Technique;IEEE Microwave and Wireless Technology Letters;2023-12