A Cryogenic Four-Channel C-Band Low-Noise Amplifier MMIC in 50-nm Metamorphic High-Electron-Mobility-Transistor Technology-Reference-Cited by-同舟云学术

A Cryogenic Four-Channel C-Band Low-Noise Amplifier MMIC in 50-nm Metamorphic High-Electron-Mobility-Transistor Technology

Published:2023-06-11 Issue: Volume: Page:
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Container-title:2023 IEEE/MTT-S International Microwave Symposium - IMS 2023
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Author:

Heinz Felix¹,Thome Fabian¹,Leuther Arnulf¹

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF,Germany

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10187888/10187785/10188065.pdf?arnumber=10188065

Reference15 articles.

1. Design and measurements of cryogenic MHEMT IF low noise amplifier for radio astronomical receivers;chiong;Proc Eur Microw Integr Circuits Conf,2009

2. A 300-?W Cryogenic HEMT LNA for Quantum Computing;cha;IEEE MTT-S Int Microw Symp Dig,2020

3. A Frequency and Bandwidth Reconfigurable 3–6 GHz Cryogenic SiGe BiCMOS LNA with a Power Consumption of ≤ 2.9 mW

4. Design and Implementation of a 3.9-to-5.3 GHz 65 nm Cryo-CMOS LNA with an Average Noise Temperature of 10.2K

5. A sub-milliwatt 4–8 GHz SiGe cryogenic low noise amplifier

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1. A 4-7 GHz Broadband Cryogenic GaAs mHEMT LNA with a Flatness Gain Variation of ±1.2 dB;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

2. Modeling of 50-nm Metamorphic HEMTs for Cryogenic Ultra-Low-Power Operation;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

3. Monolithically Integrated $C$-Band Low-Noise Amplifiers for Use in Cryogenic Large-Scale RF Systems;IEEE Transactions on Microwave Theory and Techniques;2023