A Frequency and Bandwidth Reconfigurable 3–6 GHz Cryogenic SiGe BiCMOS LNA with a Power Consumption of ≤ 2.9 mW
Author:
Funder
DARPA
ONR
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9574790/9574791/09574918.pdf?arnumber=9574918
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 1.6-mW Cryogenic SiGe LNA IC for Quantum Readout Applications Achieving 2.6-K Average Noise Temperature From 3 to 6 GHz;IEEE Microwave and Wireless Technology Letters;2024-06
2. A 4-7 GHz Broadband Cryogenic GaAs mHEMT LNA with a Flatness Gain Variation of ±1.2 dB;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19
3. A 0.32×0.12 mm2 Cryogenic BiCMOS 0.1–8.8 GHz Low Noise Amplifier Achieving 4 K Noise Temperature for SNWD Readout;IEEE Transactions on Microwave Theory and Techniques;2024-04
4. Realizing Joint Communication and Sensing RF Receiver Front-Ends: A Survey;IEEE Access;2024
5. 100-μW Cryogenic HEMT LNAs for Quantum Computing;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
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