A sub-milliwatt 4–8 GHz SiGe cryogenic low noise amplifier-Reference-Cited by-同舟云学术

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A sub-milliwatt 4–8 GHz SiGe cryogenic low noise amplifier

Published:2017-06 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE MTT-S International Microwave Symposium (IMS)
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Author:

Montazeri Shirin,Bardin Joseph C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8048779/8058449/08058937.pdf?arnumber=8058937

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 6mW Cryogenic SiGe Receiver IC for High-Fidelity Qubit Readout;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

2. A 1.6-mW Cryogenic SiGe LNA IC for Quantum Readout Applications Achieving 2.6-K Average Noise Temperature From 3 to 6 GHz;IEEE Microwave and Wireless Technology Letters;2024-06

3. A 2-12GHz SiGe BiCMOS Cryogenic LNA with 6K Noise Temperature and 1.3mW DC Power;2023 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2023-11-13

4. Modeling of 50-nm Metamorphic HEMTs for Cryogenic Ultra-Low-Power Operation;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

5. A Cryogenic Four-Channel C-Band Low-Noise Amplifier MMIC in 50-nm Metamorphic High-Electron-Mobility-Transistor Technology;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

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