Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications-Reference-Cited by-同舟云学术

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Resistive nickel temperature sensor integrated into short-gate length AlGaN/GaN HEMT dedicated to RF applications

Published:2018 Issue: Volume: Page:1-1
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Cozette Flavien,Lesecq Marie,Cutivet Adrien,Defrance Nicolas,Rousseau Michel,Maher Hassan,De Jaeger Jean Claude

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/4357973/08467376.pdf?arnumber=8467376

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On-Chip Sensors for Temperature Monitoring of Packaged GaN MMICs;IEEE Transactions on Components, Packaging and Manufacturing Technology;2024-05

2. Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT;Journal of Computational Electronics;2023-12-19

3. Thermal Transient Measurements of GaN HEMT Structures by Electrical Measurements;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18

4. Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures;IEEE Microwave and Wireless Components Letters;2021-11

5. New thermal small-signal model for FP-HEMT used in satellite communication application;Semiconductor Physics, Quantum Electronics and Optoelectronics;2021-06-16

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