Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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Comparative study of electrical investigation for temperature measurement in AlGaN/GaN HEMT

Published:2023-12-19 Issue: Volume: Page:
ISSN:1569-8025
Container-title:Journal of Computational Electronics
language:en
Short-container-title:J Comput Electron

Author:

Jui Fahmida Sharmin,Alam Sabrina,Jarndal Anwar,Gaquiere Christophe,Alim Mohammad A.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10825-023-02121-w.pdf

Reference32 articles.

1. Kurd, Z., Ahangari, Z., Mohammad Zamani, M.J., et al.: Impact of gate sidewall angle on the electrical characteristics of V-shaped gate III-nitride HEMTs: an investigation into self-heating and geometrical effects. J. Comput. Electron. 20, 2431–2440 (2021)

2. Rodríguez, R., González, B., García, J., Yigletu, F.M., Tirado, J.M., Iñiguez, B., Nunez, A.: Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials. Phys Status Sol(a). 212(5), 1130–1136 (2015)

3. Oishi, T., Ito, K.: A simulation study of the impact of traps in the GaN substrate on the electrical characteristics of an AlGaN/GaN HEMT with a thin channel layer. J. Comput. Electron. 20, 2441–2455 (2021)

4. Gaska, R., Osinsky, A., Yang, J.W., Shur, M.S.: Self-heating in high-power AlGaN-GaN HFETs. IEEE Electron Dev. Lett. 19(3), 89–91 (1998)

5. Sadi, T., Kelsall, R.W., Pilgrim, N.J., et al.: Monte Carlo study of self-heating in nanoscale devices. J. Comput. Electron. 11, 118–128 (2012)

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