Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials-Reference-Cited by-同舟云学术

Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials

Published:2015-01-20 Issue:5 Volume:212 Page:1130-1136
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Rodríguez Raúl¹,González Benito¹,García Javier¹,Yigletu Fetene M.²,Tirado José M.³,Iñiguez Benjamín²,Nunez Antonio¹

Affiliation:

1. IUMA; Universidad de Las Palmas de Gran Canaria; Campus Universitario de Tafira; 35017 Las Palmas de G.C. Spain

2. Departament d'Enginyeria Electrònica; Elèctrica i Automàtica; Universitat Rovira i Virgili; 43007 Tarragona Spain

3. Department of Electrical, Electronic, Control, and Communications Engineering; University of Castilla-La Mancha; 45071 Toledo Spain

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

1. Noise properties of four-wave mixing of signal and noise

2. Thermal analysis of AlGaN-GaN power HFETs

3. F. Sechi M. Bujatti 2009

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