Funder
Ministry of Education, Culture, Sports, Science, and Technology
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Modeling and Simulation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference48 articles.
1. Saremi, M., et al.: Analysis of the reverse I-V characteristics of diamond-based PIN diodes. Appl. Phys. Lett. 111, 043507 (2017). https://doi.org/10.1063/1.4986756
2. Saremi M.: Modeling and Simulation of the Programmable Metallization Cells (PMCs) and Diamond-Based Power Devices. Dissertation of Doctor of Philosophy, Arizona State University, USA 2017. https://repository.asu.edu/items/44124. Accessed 3 June 2021
3. Coffie, R. L.: High power high frequency transistors: a material’s perspective. In high-frequency GaN Electronic Devices, Ediors, P. Fay, D. Jena, P. Maki, AG, Switzerland: Springer Nature, (2020). ch. 2, pp. 5–41
4. Mishra, U.K., et al.: AlGaN/GaN HEMTs—an overview of device operation and applications. Proc. IEEE 90, 1022–1031 (2002). https://doi.org/10.1109/JPROC.2002.1021567
5. Amano, H: GaN as A Key Material for Realizing Internet of Energy. CSW2019, May 2019, MoPLN1–1, https://www.csw-jpn.org/wp-content/uploads/2019/01/CSW2019_Abstract_AMANO.pdf.
Cited by
2 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献