Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures-Reference-Cited by-同舟云学术

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Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures

Published:2021-11 Issue:11 Volume:31 Page:1219-1222
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Guo Haowen,Zhou Junmin,Wang Maojun^ORCID,Zou Xinbo^ORCID

Funder

ShanghaiTech University Startup Fund

Shanghai Pujiang Program

Shanghai Eastern Scholar (Youth) Program

Chinese Academy of Sciences (CAS) Strategic Science and Technology Program

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/9604080/09427544.pdf?arnumber=9427544

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Noise Characterization and Modeling of GaN-HEMTs at Cryogenic Temperatures;IEEE Transactions on Microwave Theory and Techniques;2023-05

2. Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature;IEEE Transactions on Power Electronics;2022-10

3. DC and low-frequency noise characteristics of GaN-based HEMTs under cryogenic temperatures;Journal of Physics D: Applied Physics;2022-08-31

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