Abstract
Abstract
In this work, the device characteristics of GaN-based high-electron-mobility transistors (HEMTs) were systematically investigated by the direct current (DC) and low-frequency noise (LFN) measurements within the temperature ranging from 300 K to 4.2 K. The temperature-dependent behavior of the on- and off-state electrical properties was statistically analyzed, highlighting an overall improved device performance under cryogenic temperatures. In addition, the LFN of the device exhibited an evident behavior of 1/f noise from 10 Hz to 10 kHz in the measured temperature range and can be well described by the carrier number fluctuations with correlated mobility fluctuations (CNF/CMF) model down to 4.2 K. Based on this model, we further extracted and discussed the defect-related behavior in the devices under low-temperature environments. These experimental results provide insights into the device characteristics of GaN-based HEMTs under cryogenic environments, motivating further studies into the GaN-based cryo-devices and systems.
Funder
National Natural Science Foundation of China
National Key Research and Development Program of China
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
8 articles.
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