Reliability and PVT simulation of FinFET circuits using Cadence Virtuoso
Author:
Affiliation:
1. Shri Mata Vaishno Devi University,School of Electronics and communication Engineering,Katra,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9707901/9707891/09707937.pdf?arnumber=9707937
Reference19 articles.
1. Performance estimation of junctionless multigate transistors
2. FinCANON: A PVT-Aware Integrated Delay and Power Modeling Framework for FinFET-Based Caches and On-Chip Networks
3. Impact of different transistor arrangements on gate variability
4. Ultrafast Measurements and Physical Modeling of NBTI Stress and Recovery in RMG FinFETs Under Diverse DC–AC Experimental Conditions
5. Study on device reliability for P-type FinFETs with different fin numbers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. NBTI Effect Survey for Low Power Systems in Ultra-Nanoregime;Current Nanoscience;2024-05
2. Review of the Nanoscale FinFET Device for the Applications in Nano-regime;Current Nanoscience;2023-09
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