Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications-Reference-Cited by-同舟云学术

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Published:2008-03 Issue:2 Volume:23 Page:692-697
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Nomura T.,Masuda M.,Ikeda N.,Yoshida S.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx5/63/4463842/04456906.pdf?arnumber=4456906

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